Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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3N170 | N-channel enchancement mode MOSFET | Linear-Integrated-System-Inc-Linear-Systems | - | 4 | -65°C | 200°C | 13 K |
IXBH16N170 | 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -55°C | 150°C | 50 K |
IXBH16N170A | 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -40°C | 150°C | 51 K |
IXBH42N170 | 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -55°C | 150°C | 50 K |
IXBT16N170 | 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -55°C | 150°C | 50 K |
IXBT16N170A | 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -40°C | 150°C | 51 K |
IXBT42N170 | 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -55°C | 150°C | 50 K |
IXFN170N10 | 100V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 145 K |
LWN1701-6 | 250 Watt, input voltage range:85-264/90-350V, output voltage 37V,(6.6A) AC/DC converter | distributor | SO | 11 | -40°C | 60°C | 110 K |
TC54VN1701ECBTR | Voltage detector, Nch output, 1.7V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
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