Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MCM101524TB15 | 1M x 4 bit fast static random access memory | Motorola | TB | 36 | 0°C | 60°C | 454 K |
MCM101525TB15 | 2M x 2 bit fast static random access memory | Motorola | TB | 36 | 0°C | 60°C | 454 K |
MTB15N06E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 231 K |
MTB15N06V | TMOS V power field effect transistor | Motorola | DPAK | 4 | -55°C | 175°C | 274 K |
STB15N25 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
TB1500H | Rated repetitive off-state voltage:140 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 46 K |
TB1500L | 140V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 190 K |
TB1500L | Rated repetitive off-state voltage:140 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 47 K |
TB1500M | Rated repetitive off-state voltage:140 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 47 K |
UPTB15 | Transient Voltage Suppressor | Microsemi-Corporation | POWERMITE | - | - | - | 156 K |
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